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| 2SD2030, 2SD2031 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Outline Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SD2030 160 160 5 100 400 150 -55 to +150 2SD2031 200 200 5 100 400 150 -55 to +150 Unit V V V mA mW C C 2SD2030, 2SD2031 Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol 2SD2030 V(BR)CBO 2SD2031 Collector to emitter breakdown voltage 2SD2030 V(BR)CEO 2SD2031 Emitter to base breakdown voltage Collector cutoff current V(BR)EBO Min 160 200 160 200 5 -- -- -- -- 10 V A I E = 10 A, IC = 0 VCB = 140 V, IE = 0 VCB = 160 V, IE = 0 hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: Grade hFE1 B 60 to 120 C 100 to 200 VBE VCE(sat) fT Cob 1 Typ -- Max -- Unit V Test conditions I C = 10 A, IE = 0 -- -- V I C = 1 mA, RBE = 2SD2030 I CBO 2SD2031 DC current transfer ratio 60 30 -- -- -- -- -- -- -- -- 140 3.8 200 -- 1.5 0.5 -- -- V V MHz pF VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA I C = 30 mA, IB = 3 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SD2030 and 2SD2031 are grouped by h FE1 as follows. 2 2SD2030, 2SD2031 3 2SD2030, 2SD2031 4 2SD2030, 2SD2031 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 5 |
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